Evaporation apparatus and method

ABSTRACT

An evaporation apparatus comprises a chamber configured to contain at least one dispensing nozzle and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one dispensing nozzle and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape. The at least one adjustable shielding member has a heater.

FIELD

This disclosure relates to evaporation apparatus and methods fordepositing thin films.

BACKGROUND

Photovoltaic cells or solar cells are photovoltaic components for directgeneration of electrical current from sunlight. Due to the growingdemand for clean sources of energy, the manufacture of solar cells hasexpanded dramatically in recent years and continues to expand. Varioustypes of solar cells exist and continue to be developed. The solarenergy collecting modules generally include large, flat substrates, onwhich a back contact layer, an absorber layer, a buffer layer, and afront contact layer are formed.

A plurality of solar cells are formed on one substrate, and areconnected in series by respective interconnect structures in each solarcell to form a solar cell module. The absorber layer absorbs thesunlight that is converted into electrical current using the backcontact layer. Semi-conductive materials are used in the manufacturingor fabrication of at least some known solar cells by being used as thematerial to form the absorber layer. Chalcopyrite based semi-conductivematerials, such as copper indium gallium (di)selenide (CIGS), are usedto form the absorber layer that is deposited onto the substrate.

However, there can be challenges and limitations in using suchtechniques. For example, when using co-evaporation, it can be difficultto uniformly evaporate metal elements, such as indium, gallium, andselenium over a wide area.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic front view of an evaporation apparatus.

FIG. 2 is a schematic bottom plan view of the apparatus of FIG. 1, asseen from section line 2-2 of FIG. 1.

FIG. 3 is an isometric view of an adjustable shielding member as shownin FIG. 2.

FIG. 4 is an isometric view of one of the slats of the adjustableshielding member shown in FIG. 3.

FIG. 5 shows a linear actuator or servomotor for positioning the slat ofFIG. 4.

FIG. 6 shows a plurality of linear actuators or servomotors forpositioning the slats of FIG. 3.

FIG. 7 is an exploded view of the aperture and adjustable shieldingmember of FIG. 1.

FIG. 8A is a graph showing a coating thickness profile produced by theevaporation apparatus before and after adjusting the adjustableshielding member as shown in FIG. 8B.

FIG. 9A is a graph showing a coating thickness profile produced by theevaporation apparatus before and after adjusting the adjustableshielding member as shown in FIG. 9B.

FIGS. 10A-10C show actuation of individual slats of the adjustableshielding member of FIG. 1, to provide an asymmetrical aperture.

FIG. 11 shows a rotation of the adjustable shielding member of FIG. 1 tochange the elevation angle of the shielding member.

FIGS. 12A-12D show an embodiment of the adjustable shielding memberhaving slats individually rotatable about the respective axis of eachslat.

FIGS. 13A and 13B show servo mechanisms for rotating the slats of FIG.11 and FIG. 12D, respectively.

FIG. 14 is a flow chart of a method for adjusting the evaporationapparatus.

DETAILED DESCRIPTION

This description of the exemplary embodiments is intended to be read inconnection with the accompanying drawings, which are to be consideredpart of the entire written description. In the description, relativeterms such as “lower,” “upper,” “horizontal,” “vertical,”, “above,”“below,” “up,” “down,” “top” and “bottom” as well as derivative thereof(e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should beconstrued to refer to the orientation as then described or as shown inthe drawing under discussion. These relative terms are for convenienceof description and do not require that the apparatus be constructed oroperated in a particular orientation. Terms concerning attachments,coupling and the like, such as “connected” and “interconnected,” referto a relationship wherein structures are secured or attached to oneanother either directly or indirectly through intervening structures, aswell as both movable or rigid attachments or relationships, unlessexpressly described otherwise.

Methods and apparatus are described herein to improve thin filmthickness uniformity by using at least one adjust shielding member orplate with a heater. The profile of the aperture area of the shieldingplate can be adjusted by automated controls, or manually. Thetemperature of the at least one adjustable shielding member or plate canalso be adjusted by automated controls or manually.

FIG. 1 is a schematic elevation view of a vapor deposition apparatus.FIG. 2 is a bottom plan view of the apparatus of FIG. 1. The apparatus100 includes a chamber 100 configured to contain at least one manifold102 having at least one dispensing nozzle 102 n, and at least onesubstrate 104 to be coated with the vapor dispensed from the nozzle 102n. Although a cylindrical evaporation manifold 102 is shown, manifoldshaving other configurations (e.g., having one or more flat surfaces) canalso be used.

The chamber 100, in which the deposition takes place, is maintainedunder vacuum by a suitable vacuum pump (not shown). A vacuum port 118 isprovided for evacuating air from the chamber 100. The apparatus 100 issuitable for processing substrates 104 which are larger in surface areathan the cross section of the aperture 108 through which the material tobe deposited passes. Thus, in the case of a large substrate, such as asolar panel, material is not deposited over the entire surface area ofthe substrate 104 simultaneously. Substrates 104 are carried through thechamber 100 on an endless conveyor 101. Material is deposited on eachregion of the substrate 104 as that region passes under the aperture108.

In some embodiments, as shown in FIG. 2, the manifold 102 has aplurality of nozzles 102 n for delivering a vapor substantiallyuniformly across a width of the solar cell substrate. The widthdirection is normal to the motion of the conveyor 101, which conveys thesubstrate 104 past the manifold 102. The vapor is supplied from anevaporation source 115. In some embodiments, the evaporation source 115includes a stainless steel tank, having an internal surface coated withtitanium.

A gas conduit 117 connects the manifold 102 to the evaporation source.The conduit 117 can have a heater 117 h on or adjacent thereto, to heatthe conduit to a temperature above the melting point of the vapor to beconveyed by the conduit. An electronically controllable gas valve 111 inthe gas conduit 117 controls the vapor dispensing rate from theevaporation source 115.

In some embodiments, the substrate 104 is a thin film solar cell or apanel having a plurality of thin film solar cells. Such solar cells orpanels 104 include a photovoltaic thin film which serves as lightabsorber material, formed over a substrate. Suitable materials for theunderlying substrate include for example without limitation, glass (suchas soda lime glass), ceramic, metals such as thin sheets of stainlesssteel and aluminum, or polymers such as polyamides, polyethyleneterephthalates, polyethylene naphthalates, polymeric hydrocarbons,cellulosic polymers, polycarbonates, polyethers, combinations thereof,or the like. The absorber film is formed over substrate.

In some embodiments, the absorber material is copper indium gallium(di)selenide (CIGS), a I-III-VI₂ semiconductor material composed ofcopper, indium, gallium, and selenium. CIGS is a solid solution ofcopper indium selenide (often abbreviated “CIS”) and copper galliumselenide. CIGS is a tetrahedrally bonded semiconductor, with thechalcopyrite crystal structure, and a bandgap varying continuously withx from about 1.0 eV (for copper indium selenide) to about 1.7 eV (forcopper gallium selenide).

In an embodiment, the photovoltaic may comprise a p-type material. Forexample, the absorber layer can be a p-type chalcogenide material. In afurther embodiment, the absorber layer can be a CIGS Cu(In,Ga)Se₂material. In other embodiments, chalcogenide materials including, butnot limited to, Cu(In,Ga)(Se,S)₂ or “CIGSS,” CuInSe₂, CuGaSe₂, CuInS₂,and Cu(In,Ga)S₂. can be used as an absorber layer material. Suitablep-type dopants that can be used for forming absorber layer includewithout limitation boron (B) or other elements of group II or III of theperiodic table. In another embodiment, the absorber layer may comprisean n-type material including, without limitation, cadmium sulfide (CdS).

In other embodiments, the photovoltaic material is amorphous silicon(a-Si), protocrystalline, nanocrystalline (nc-Si or nc-Si:H), blacksilicon. or other thin-film silicon (TF-Si), Cadmium telluride (CdTe),or Dye-sensitized solar cell (DSC) or other organic solar cell material.

In some embodiments, the adjustable shielding method and apparatusdescribed herein are used for depositing one or more precursors (e.g.,indium, gallium, and/or selenium) of the CIGS absorber layer. In someembodiments, the adjustable shielding method and apparatus describedherein are used for depositing one or more other layers, besides thephotovoltaic material.

For example, in some embodiments, a back electrode comprising an initialmolybdenum (Mo) bilayer is first sputtered onto a glass, metal foil orpolymer substrate as the first electrode layer. A P1 microchannel isscribed in the Mo layer. Then the photovoltaic (absorber) layerdescribed above is deposited over the Mo layer. In some embodiments, asodium layer is deposited over the back electrode from an evaporationsource. In some embodiments, one or more of the absorber CIGS precursorsare deposited by co-evaporation from one or more evaporation sourcesinto the chamber. Then a buffer layer of CdS, AnS or InS is formed bysputtering, atomic layer deposition (ALD) or chemical-bath-deposition(CBD). The P2 microchannel is scribed. Then, the second electrode layer(e.g., a zinc oxide (i-ZnO) or Aluminum doped ZNO (AZO), boron-doped ZnO(BZO) is sputtered (or formed by Metal Organic Chemical VaporDeposition, MOCVD) over the buffer layer. The P3 scribe line is thenformed. In some embodiments, after the P3 scribing, the evaporationmethod can also be used to deposit an anti-reflective coating, such asmagnesium fluoride (MgF₂). In various embodiments, the shielding methodand apparatus described herein can be used for evaporation orco-evaporation of any one or more of the back electrode layer, absorberlayer, the buffer layer, the front electrode layer and/or theanti-reflective coating layer.

The evaporation apparatus is also suitable for depositing material ontoother types and sizes of substrates, including but not limited tosemiconductor wafers.

Referring again to FIGS. 1 and 2, the chamber 100 has at least oneadjustable shielding member 106 (e.g., at least one shielding plate)defining an adjustable aperture 108. The at least one member 106 ispositioned between the at least one dispensing manifold 102 and the atleast one substrate 104.

The aperture 108 is adjustable in at least one of the group consistingof area and shape. Some embodiments (e.g., FIGS. 3-9B) include oneadjustable shielding member 106 along one of the longer side edges ofaperture 108. Other embodiments (e.g., FIGS. 1-2) include respectiveadjustable shielding members 106 on each of the two long sides of theaperture 108. Other embodiments (not shown) include respectiveadjustable shielding members 106 on one or both of the two short ends ofthe aperture 108, adjacent the plates 111. As described below, the atleast one adjustable shielding member 106 includes a heating element 107h for heating the adjustable shielding member.

The dispensing manifold 102 has one or more dispensing nozzles 102 n andone or more heating elements 103. In some embodiments, the heatingelements 103 are positioned locally, adjacent the nozzle(s) 102 n asshown in FIGS. 1 and 2. In other embodiments (not shown), the heatingelements extend around the entire circumference of the manifold 102(outside of the areas occupied by the nozzles 102 n).

The dispensing manifold 102 is fluidly coupled to an evaporation source115 by an appropriate gas conduit. A gas flow control valve 111 controlsthe flow rate of the precursor vapor to the chamber 100. In someembodiments, a heating element 111 h is applied to the valve 111. Thevalve 111 is selected to transmit vapor at temperatures in the range ofthe materials to be deposited. For evaporation deposition of indium,gallium, selenium and/or sulfur, the valve is configured to transmitvapor at temperatures in the range from about 200° C. to about 1000° C.The valve 111 can be of a type having interior surfaces coated withtitanium. In some embodiments, the conduit 117 is heated by heater 117 hto a temperature above the melting point of the vapor, to preventcondensation or accumulation of the material in the conduit.

At least one heater control unit 113 is provided. In some embodiments, asingle heater control unit 113 controls the heaters 103, 107 h, 111 hand 117 h. For example, for each type of material to be deposited, theheater control unit 113 has a respective predetermined setpointtemperature for the adjustable shielding plates 107, manifold 102, valve111 and conduit 117. For closed loop control, the temperatures of plates107, manifold 102, valve 111 and conduit 117 are sensed during vapordeposition, and the heater control unit controls supply of current tothe heaters to maintain the temperatures at the setpoint. In someembodiments, the heater control unit 113 is a programmed general purposeprocessor. In other embodiments, the heater control unit 113 is anembedded microcontroller or microprocessor, or a programmable logiccontroller (PLC).

In other embodiments, up to four separate heater control units (notshown) are provided for controlling adjustable shielding plates 107,manifold 102 valve 111, and conduit 117, respectively.

As best seen in FIGS. 3-6, in some embodiments, the at least oneadjustable shielding member 106 includes a plurality of independentlymovable slats 107, arranged parallel to each other along at least oneside of the aperture 108. The slats 107 can be formed of a shieldingmaterial such as metal (e.g., carbon, molybdenum, stainless steel,stainless steel coated with Ti or Ni/Al), which blocks the vaporparticles from the nozzle(s) 102 n. The plurality of slats 107 on atleast one side are spaced sufficiently close to each other, so that anedge defining the aperture is substantially continuous along ends of theplurality of slats, and the aperture is substantially continuous alongthe two opposite sides.

Thus, if there is a small gap (relative to the width of the slats)between each pair of adjacent slats 107, the size of aperture 108 isstill effectively reduced, as the passage of vapor through any spacesbetween adjacent slats 107 is small.

As shown in FIG. 4, each of the individual slats 107 of the adjustableshielding members 106 includes at least one heating element 107 h. Invarious embodiments, the heating elements 107 h can be a high resistancewiring or a discrete resistor, for example. The number, resistance andconfiguration of the heating elements 107 h can be varied to accommodatethe size, shape and heat capacity of each individual slat 107 and thedesired temperature control range of the adjustable shielding members106.

The inventor has determined that by heating the plates (slats 107),manifold 102, valve 111 and/or conduit 117 to a temperature above themelting temperature of the material to be deposited by evaporation onthe substrate 104, condensation of the precursor materials on theplates, manifold and valve (and adhesion to these surfaces) can beavoided. Further, by avoiding condensation and adhesion of the materialto the manifold, clogging of the nozzles 102 n is avoided. Without theheating, clogging can be more severe near the vapor entrance to themanifold, which can lead to poor thickness uniformity. Heating themanifold can uniformly prevent clogging throughout the heated length ofthe manifold, eliminating a cause of poor thickness uniformity.Depending on which precursor is being deposited, the temperature of theplates (slats 107), manifold 102 and/or valve 111 can be set to a valuefrom about 200° C. to about 1000° C.

Similarly, by heating the aperture shielding plates 107, adhesion ofmaterial on the plates is prevented. This prevents the plates fromsticking to each other, and prevents changes to the dimensions of theplates due to accumulation of deposited material. Also, by heating thevalve 111, adhesion of material on the fluid flow surfaces of the valveis prevented, so that the flow rate of the valve can be reliablycontrolled, and clogging of the valve is avoided. The efficiency ofchalcopyrite-based cell can be enhanced by smooth morphology andcompositional uniformity of chalcopyrite films.

Using the apparatus described herein, other causes of non-uniform filmthickness can also be addressed. For example, in the event that one ormore of the nozzles 102 n are clogged, the aperture area of theadjustable shielding member 106 can be changed to compensate for theclogged nozzle(s) 102 n, Similarly, the adjustable shielding members 106any non-uniformity or deviation in thickness due to the residual amountof the evaporation source 115 and/or the opening percentage of the valve111.

In FIG. 3, two opposite sides of the aperture 108 have a frame member109. In some embodiments, the frame member is in the form of steel oraluminum angle stock. Each of the plurality of slats 107 has a guidemechanism 107 p for guiding movement of that slat. In the example ofFIG. 7, the guide mechanism is 107 p is a projection. Each slat 107 hasa projection 107 p on its face, The projections 107 p can have a varietyof shapes, such as circular, elliptical, or rectangular. A plate 105 ismounted to the frame member 109 and has a plurality of slots 105 sadapted to receive the projections 107 p of respective plates. A shieldplate 113 (FIG. 7) protects the plate 105, and prevents contamination bymaterial from the evaporation source 115. In other embodiments (notshown), the plate 105 has a plurality of projections, and each slat 107has a respective slot configured to receive a respective one of theprojections.

In the example of FIG. 3, the slats are sized and spaced so that eachslat slidably abuts the adjacent slats on either side. In someembodiments, the abutting side edges 107 a, 107 b are flat. In otherembodiments, one side edge 107 a of each slat 107 has a longitudinalgroove, and the other side edge 107 b has a longitudinal ridge or tonguesized and shaped to be received by the groove of an adjacent slat 107.

As best seen in FIGS. 5 and 6, the apparatus includes a respectivelinear actuator or servomotor 110 for each respective movable slat 107.The chamber 100 is configured to be operated at a partial vacuumpressure below atmospheric pressure; and the linear actuators orservomotors 110 are configured to be adjusted remotely while the chamberis at the partial vacuum pressure. Thus, adjustment and reconfigurationof the aperture 108 can be accomplished without opening the chamber 100or breaking the vacuum.

The linear actuators or servomotors 110 can be controlled by a wired orwireless interface. In some embodiments, each actuator is coupled to acontrol unit 112. In some embodiments, the control unit 112 is aprogrammed general purpose processor. In other embodiments, the controlunit is an embedded microcontroller or microprocessor, or a programmablelogic controller (PLC). In other embodiments (not shown), the controlunit 112 comprises a programmed processor, where the control unit 112includes a program hosted on the same processor as the heater controlunit 113.

In some embodiments, the control unit 112 sets the extension length ofeach actuator or servomotor 110 according to one of a predetermined setof profiles. For example, these profiles can include a convex aperture108 (wider in the center than at the ends) as shown in FIG. 8B, or aconcave aperture 108 (wider at the ends than at the middle) as shown inFIG. 9B).

As shown in FIG. 6, if the movable slats 107 are all fully retracted,the distal ends of the slats 107 form a straight line parallel to theplate 105, so that the aperture 108 defined by the adjustable shieldingmember 106 is substantially rectangular. The size of the aperture 108can be adjusted (without changing aperture shape) by extending orretracting all of the slats 107 by an equal distance.

FIG. 3 shows the slats 107 arranged so that the extension of eachrespective slat 107 varies linearly from one end of the at least oneadjustable shielding member 106 to the other end. Although there aresmall step increments of extension between adjacent slats 107, thisarrangement approximates a straight diagonal line. The larger the numberof slats in each side (and the smaller the width of each slat), thecloser the edge of the aperture approaches a straight line or smoothcurve shape. With straight edges on three sides of the aperture 108, andthe arrangement of FIG. 3 substantially diagonal to the other threeedges, the aperture 108 can be adjusted to have a substantially righttrapezoidal shape.

FIG. 2 shows a configuration with adjustable shielding members 106 alongeach long side of aperture 108. The adjustable shielding members 106 canbe configured so that the aperture 108 is wider at the center andnarrower at the ends. In this configuration, the aperture 108 has asubstantially hexagonal shape. If the thickness distribution issymmetrical before adjusting the aperture 108, it is useful to apply thesame adjustment to the shielding members 106 on both opposite sides ofthe aperture 108.

FIG. 7 shows a configuration in which adjustable shielding member 106 isconfigured so that one of the longer sides of the aperture 108 is flatat the center and tapers off towards both ends. In other words, theprofile of the shielding members is flat at the center and extendsinward toward the center at each end. In this configuration, theaperture 108 has a substantially hexagonal shape. Further, if adjustableshielding members 106 are included along both longer sides of theaperture 108, and arranged in this configuration, an octagonal aperturecan be formed.

FIG. 8B shows a configuration with an adjustable shielding member 106along one long side of aperture 108. The adjustable shielding member 106can be configured so that one of the longer sides of the aperture 108 iswider at the center and narrower at the ends. In this configuration, theaperture 108 has a substantially pentagonal shape. If uneven clogging ofthe nozzles 102 n produces substantial differences between the filmthickness on each side of the substrate, and the thickness of thecoating before adjusting the shielding member 106 is asymmetric, then itmay be advantageous to apply different adjustments on the shieldingmembers 106 on opposite sides of the aperture, to reduce the asymmetryin the thickness. Thus, as shown in FIG. 8B, adjustment of the edge onone side of the aperture 108 can reduce the asymmetry in the thickness.

FIG. 9B shows the adjustable shielding member 106 adjusted so that theaperture 108 cc is narrower at the center than at the ends. In aconfiguration having adjustable shielding members 106 on both of thelong sides of the aperture 108, the aperture 108 cc has an hourglassconfiguration.

These are just a few examples. The slats 107 can be arranged in otherconfigurations as desired, for applying symmetrical or asymmetricaladjustments, depending on the thickness distribution observed prior tothe adjustment. For example, using a second order polynomial to computethe extension length of each slat 107, a substantially ellipticalaperture 108 is achieved.

FIGS. 10A-10C show an example of an asymmetrical adjustment. Forexample, upon applying a layer of material to the substrate 104 byevaporation, an in situ measurement may indicate that the thickness ofthe film is not uniform in the Y-axis direction (FIG. 10C), transverseto the direction of travel (X-axis direction). This non-uniformity canbe addressed by adjusting the lengths of individual slats 107 to beshorter (FIG. 10A) or longer (FIG. 10B). As shown in FIG. 10C, theprofile of the adjustable shielding member 106 can be irregular andnon-monotonic, to correct a complex topology of the deposited film.Also, as shown in FIG. 10C, the aperture 108 can be asymmetrical. In theexample of FIG. 10C, aperture 108 has an irregular trailing edge (leftside) and a straight leading edge (right side). As indicated in FIGS.10A-10B, the slats 107 of the adjustable shielding member 106 can beheated to a temperature above the melting point of the materialdeposited on the substrate 104, to prevent adhesion of the material onthe adjustable shielding member 106,

FIG. 11 schematically shows another example, in which the adjustableshielding member 106 is rotatable about the Y-axis, to adjust theelevation angle of the adjustable shielding member 106. Because theprojection of the adjustable shielding member 106 in the plane of thesubstrate 104 is l*cos θ, where l is the length of the shielding member,rotation of the shielding member 106 can reduce the projection of theshielding member in the plane of the substrate 104, and effectivelyincrease the size of the aperture. As indicated in FIG. 11, theadjustable shielding member 106 can be heated to a temperature above themelting point of the material deposited on the substrate 104, to preventadhesion of the material on the adjustable shielding member 106.

FIGS. 12A-12D show another example, in which the slats 107 of theadjustable shielding member 106 are individually rotatable.

FIGS. 12A and 12B are side elevation and top plan views of anevaporation apparatus 200 with a an adjustable shielding member 206comprising a plurality of elongated slats 207 extending across theaperture. With all of the slats 207 lying flat in and parallel to thesubstrate, the aperture is 100% closed.

FIGS. 12C and 12D are side elevation and top plan views of anevaporation apparatus 200 with the individual slats 207 of theadjustable shielding member 206 rotated by an angle θ away from thehorizontal position of FIG. 12A. For a slat of length l, the projectionof each slat 207 in the plane of the substrate 104 is w*cos(θ), where wis the width, and θ is the angle of rotation away from the horizontalposition of FIG. 12A. By rotating each slat 207 individually, the widthof each space 208 between adjacent slats 207 can be individuallycontrolled. Thus, the distribution of the vapor can be varied toeliminate thickness non-uniformity of the deposited film.

FIG. 13A shows an example of a mechanism for rotating the shieldingmember 106 of FIG. 11 about a fixed pivot point 106 f. A linearactuator, such as a servomotor 110 can be connected by a linkage 123 tothe adjustable shielding member 106. Thus, linear actuation of theservomotor 110 causes rotation of the shielding member 106 to thedesired elevation angle. To provide finer granularity of control, eachindividual slat 107 can have a respective servomotor 110. In otherembodiments, two or more of the slats 107 can be actuated by oneservomotor, to reduce cost and complexity. The one or more servomotors110 are connected to the controller 112 described above.

FIG. 13B shows an example of a mechanism for rotating the elongatedslats 207 of the adjustable shielding member 206 in FIGS. 12A-12D. Eachslat is rotated about its own respective longitudinal axis. Theservomotor 210 is configured to rotate the slats 207 by a desired angleθ, as described above. To provide finer granularity of control, eachindividual slat 207 can have a respective servomotor 210. In otherembodiments, two or more of the slats 107 can be connected by a linkageto the same servomotor 210, and rotated by the same servomotor. The oneor more servomotors 210 are connected to the controller 112 describedabove.

Utilizing an adjustable shielding plate including a respectiveservomotor and a linkage mechanism, the aperture can be adjusted whilethe chamber 100 is in a vacuum state. There is no need to break thevacuum or open the chamber 100 to make adjustments.

FIG. 14 is a flow chart of an example of a method of operating theapparatus.

At step 1400 a chamber is provided containing therein at least onedispensing nozzle and at least one substrate to be coated. Thedispensing nozzle is included in a manifold coupled to an evaporationsource by a suitable conduit. The conduit has a control valve betweenthe evaporation source and the manifold. In some embodiments, thesubstrate is a soda lime glass panel for fabricating a solar panel.

At step 1402, at least one aperture shielding plate is heated. Theaperture shielding plate can be included among a plurality of plateswhich together define an adjustable aperture. For example, the apertureshielding plates can be heated to a temperature which is above themelting point of the material to be deposited on the substrate. In someembodiments, at least a portion of the manifold 102 containing the vapordistribution nozzles 102 n is also heated. In some embodiments, a gasdelivery conduit 117 and a valve 111 that controls the delivery rate ofthe vapor to the chamber 100 is also heated. In some embodiments, eachtime a different material is deposited by evaporation, the heatingtemperature of the plates, manifold, conduit and/or valve are adjusted.

At step 1404, a first vapor deposition operation is performed on a firstsubstrate in the chamber before performing an aperture adjustment.

At step 1406, a thickness profile of a coating deposited on the firstsubstrate during the first evaporation operation is determined. Adetermination is made whether the thickness of the coating is greatestat a center of the substrate, at one end of the substrate, or at twoopposite ends of the substrate.

At step 1408, an amount or type of the adjusting is determined based onthe thickness profile of the first substrate. For example, as shown inFIGS. 8A and 8B, if the thickness profile of the coating deposited onthe first substrate is thicker at an end of the substrate than at acenter of the substrate (FIG. 8A), the adjusting is performed so thataperture 108 has at least one convex side 108 cv after the adjusting(e.g., the top side of the aperture 108 in FIG. 8B). As another example,if the thickness profile of the coating deposited on the first substrateis thinner at an end of the substrate than at a center of the substrate,as shown in FIG. 9A, the adjusting is performed so that aperture 108 hasat least one concave side 108 cc (FIG. 9B) after the adjusting. In bothof these cases, by providing an aperture 108 that is larger where thecoating on the first substrate is thinner, and smaller where the coatingon the first substrate is thicker results in a more uniform coatingthickness for substrates subsequently having vapor deposition formed inthe chamber.

In some embodiments, the control unit 112 determines whether thethickness of the coating is substantially uniform, thickest at thecenter, thickest at both ends, or monotonically increasing from one sideto the other. If the thickness is uniform, a profile as shown in FIG. 6is selected. If the thickness is thickest at the center, a profile asshown in FIG. 9B is selected. If the thickness is thinnest at thecenter, a profile as shown in FIG. 8B is selected. If the thickness ismonotonically increasing, a profile as shown in FIG. 3 is selected. Ifthe thickness is asymmetric and irregular, an irregular profile as shownin FIG. 10C can be selected.

Besides determining the shape of the aperture, the total area of theaperture can be adjusted by applying the same extension to each of theslats 107. This results in an up or down movement of the edge of theaperture, without changing the slope of the edge of the aperture.

At step 1410, the at least one adjustable shielding member is adjustedbased on the determination of step 1408, to set at least one of thegroup consisting of an area and a shape of an aperture. The control unit112 uses the selected profile from step 1408, and determines a positionfor each respective slat 107 of the adjustable shielding member 106. Thecontrol unit 112 then transmits control signals to the respective linearactuators/servomotors to cause each to move to the position for thatslat 107 corresponding to the selected profile.

At step 1412, a second and/or subsequent vapor deposition operation isperformed in the chamber after the adjusting. The first and second vapordeposition steps and the adjusting step are all performed under apartial vacuum. Thus, the adjusting can be performed without opening thechamber or breaking the vacuum. Although this example discusses oneadjustment, the aperture area of the adjustable shielding member(shielding) can be changed multiple times, as appropriate, according tothe changes of uniformity of vapor deposition (e.g., upon partial orcomplete clogging of any one or more of the nozzles 102 n of themanifold 102). Further, with the adjustable shielding member 106 inplace, other trimming methods are not needed.

Using these methods, improved coatings can be deposited and improvedproducts fabricated. For example, the efficiency of a CIGS-based solarcell can be enhanced by smooth morphology and compositional uniformityof one or more CIGS precursors. The thickness uniformity in large-area,in-line vapor deposition is improved. Improved thickness uniformity isadvantageous for producing quantities of high quality and highefficiency thin film solar cells. When used for CIGS-based solar cells,the method and structure improve Cu/(Ga+In) ratio (within paneluniformity). The CuInGa precursors are provided with a smooth surfacemorphology.

In some embodiments, evaporation apparatus comprises a chamberconfigured to contain therein at least one substrate to be coated and atleast one dispensing nozzle coupled to an evaporation source. Thechamber has at least one adjustable shielding member defining anadjustable aperture. The shielding member is positioned between thedispensing nozzle and a location of the substrate. The aperture isadjustable in at least one of the group consisting of area, shape, andorientation. The at least one adjustable shielding member has a heater.

In some embodiments, the chamber has a conveyor for moving the substratepast the aperture while the substrate is being coated.

In some embodiments, the at least one adjustable shielding memberincludes a plurality of independently movable slats, arranged along atleast one side of the aperture.

Some embodiments further comprises a respective linear actuator orservomotor for each respective movable slat.

In some embodiments, the chamber is configured to be operated at apartial vacuum pressure below atmospheric pressure; and the linearactuators or servomotors are configured to be adjusted remotely whilethe chamber is at the partial vacuum pressure.

Some embodiments further comprise a control unit configured to operatethe linear actuators or servomotors.

Some embodiments further comprise at least one heater on or adjacent toa manifold containing the nozzle, a conduit conveying the vapor to themanifold or a valve that controls supply of a vapor to the nozzle.

Some embodiments further comprise a control unit configured to controlsupply of current to the at least one heater.

In some embodiments, the at least one adjustable shielding memberincludes a plurality of independently movable slats, arranged along eachof at least two opposite sides of the aperture.

In some embodiments, the slats are positionable to individually rotateeach slat around a longitudinal axis thereof.

In some embodiments, the at least one adjustable shielding memberincludes at least one movable plate on a first side of the aperture, theat least one movable plate having at least one edge that is neitherparallel to nor perpendicular to a second side of the aperture, thesecond side of the aperture adjacent the first side of the aperture.

In some embodiments, evaporation apparatus comprises a chamberconfigured to contain therein at least one substrate to be coated and atleast one dispensing nozzle coupled to an evaporation source. Aplurality of movable plates are positioned between the at least onedispensing nozzle and a position of the at least one substrate, theplates defining an adjustable aperture, at least one of the plateshaving a heater.

In some embodiments, the at least one movable plate includes a pluralityof independently movable slats, arranged along each of at least one sideof the aperture. The apparatus further comprises a respective linearactuator or servomotor for each respective movable slat, the chamberconfigured to be operated at a partial vacuum pressure below atmosphericpressure, and the linear actuators or servomotors configured to beadjusted remotely while the chamber is at the partial vacuum pressure.

In some embodiments a method comprises providing a chamber containingtherein at least one substrate to be coated and at least one dispensingnozzle coupled to an evaporation source; adjusting at least oneadjustable shielding member to set at least one of the group consistingof an area and a shape of an aperture, the member positioned between theat least one dispensing nozzle and the at least one substrate; andheating the at least one adjustable shielding member before orsimultaneously with dispensing a vapor from the nozzle onto thesubstrate.

In some embodiments, the at least one adjustable shielding member isheated to a temperature of at least a melting temperature of a materialof which the vapor is comprised.

Some embodiments further comprise heating a manifold containing thenozzle, a conduit that conveys the vapor to the manifold, or a valvethat controls supply of the vapor to the nozzle before or simultaneouslywith dispensing a vapor from the nozzle onto the substrate.

Some embodiments further comprise performing a first dispensingoperation to coat a first substrate in the chamber before the adjusting;determining a thickness profile of a coating deposited on the firstsubstrate during the first dispensing operation; determining an amountor type of the adjusting based on the thickness profile; and performinga second dispensing operation on a second substrate in the chamber afterthe adjusting.

In some embodiments, the adjusting is performed so that aperture has atleast one convex side after the adjusting, if the thickness profile ofthe coating deposited on the first substrate is thicker at an end of thesubstrate than at a center of the substrate.

In some embodiments, the adjusting is performed so that aperture has atleast one concave side after the adjusting, if the thickness profile ofthe coating deposited on the first substrate is thinner at an end of thesubstrate than at a center of the substrate.

In some embodiments, the first and second dispensing steps and theadjusting step are all performed under a partial vacuum.

The control methods and control units 112 described herein may be atleast partially embodied in the form of computer-implemented processesand apparatus for practicing those processes. The disclosed methods mayalso be at least partially embodied in the form of tangible,non-transient machine readable storage media encoded with computerprogram code. The media may include, for example, RAMs, ROMs, CD-ROMs,DVD-ROMs, BD-ROMs, hard disk drives, flash memories, or any othernon-transient machine-readable storage medium, wherein, when thecomputer program code is loaded into and executed by a computer, thecomputer becomes an apparatus for practicing the method. The methods mayalso be at least partially embodied in the form of a computer into whichcomputer program code is loaded and/or executed, such that, the computerbecomes a special purpose computer for practicing the methods. Whenimplemented on a general-purpose processor, the computer program codesegments configure the processor to create specific logic circuits. Themethods may alternatively be at least partially embodied in a digitalsignal processor formed of application specific integrated circuits forperforming the methods.

Although the subject matter has been described in terms of exemplaryembodiments, it is not limited thereto. Rather, the appended claimsshould be construed broadly, to include other variants and embodiments,which may be made by those skilled in the art.

What is claimed is:
 1. Evaporation apparatus, comprising: a chamberconfigured to contain therein at least one substrate to be coated and atleast one dispensing nozzle coupled to an evaporation source; thechamber having at least one adjustable shielding member defining anadjustable aperture, the shielding member positioned between thedispensing nozzle and a location of the substrate, the aperture beingadjustable in at least one of the group consisting of area, shape, andorientation, the at least one adjustable shielding member having aheater.
 2. The apparatus of claim 1, wherein the chamber has a conveyorfor moving the substrate past the aperture while the substrate is beingcoated.
 3. The apparatus of claim 1, wherein the at least one adjustableshielding member includes a plurality of independently movable slats,arranged along at least one side of the aperture.
 4. The apparatus ofclaim 3, further comprising a respective linear actuator or servomotorfor each respective movable slat.
 5. The apparatus of claim 4, wherein:the chamber is configured to be operated at a partial vacuum pressurebelow atmospheric pressure; and the linear actuators or servomotors areconfigured to be adjusted remotely while the chamber is at the partialvacuum pressure.
 6. The apparatus of claim 4, further comprising acontrol unit configured to operate the linear actuators or servomotors.7. The apparatus of claim 6, further comprising at least one heater onor adjacent to a manifold containing the nozzle, a conduit conveying thevapor to the manifold, or a valve that controls supply of a vapor to thenozzle.
 8. The apparatus of claim 7, further comprising a control unitconfigured to control supply of current to the at least one heater. 9.The apparatus of claim 1, wherein the at least one adjustable shieldingmember includes a plurality of independently movable slats, arrangedalong each of at least two opposite sides of the aperture.
 10. Theapparatus of claim 1, wherein the slats are positionable to individuallyrotate each slat around a longitudinal axis thereof.
 11. The apparatusof claim 1, wherein the at least one adjustable shielding memberincludes at least one movable plate on a first side of the aperture, theat least one movable plate having at least one edge that is neitherparallel to nor perpendicular to a second side of the aperture, thesecond side of the aperture adjacent the first side of the aperture. 12.Evaporation apparatus, comprising: a chamber configured to containtherein at least one substrate to be coated and at least one dispensingnozzle coupled to an evaporation source; and a plurality of movableplates positioned between the at least one dispensing nozzle and aposition of the at least one substrate, the plates defining anadjustable aperture, at least one of the plates having a heater.
 13. Theapparatus of claim 12, wherein: the at least one movable plate includesa plurality of independently movable slats, arranged along each of atleast one side of the aperture; the apparatus further comprises arespective linear actuator or servomotor for each respective movableslat, the chamber configured to be operated at a partial vacuum pressurebelow atmospheric pressure, and the linear actuators or servomotorsconfigured to be adjusted remotely while the chamber is at the partialvacuum pressure.
 14. A method comprising: providing a chamber containingtherein at least one substrate to be coated and at least one dispensingnozzle coupled to an evaporation source; adjusting at least oneadjustable shielding member to set at least one of the group consistingof an area and a shape of an aperture, the member positioned between theat least one dispensing nozzle and the at least one substrate; andheating the at least one adjustable shielding member before orsimultaneously with dispensing a vapor from the nozzle onto thesubstrate.
 15. The method of claim 14, wherein the at least oneadjustable shielding member is heated to a temperature of at least amelting temperature of a material of which the vapor is comprised. 16.The method of claim 14, further comprising: heating a manifoldcontaining the nozzle, a conduit conveying the vapor to the manifold, ora valve that controls supply of the vapor to the nozzle before orsimultaneously with dispensing a vapor from the nozzle onto thesubstrate.
 17. The method of claim 14, further comprising performing afirst dispensing operation to coat a first substrate in the chamberbefore the adjusting; determining a thickness profile of a coatingdeposited on the first substrate during the first dispensing operation;determining an amount or type of the adjusting based on the thicknessprofile; and performing a second dispensing operation on a secondsubstrate in the chamber after the adjusting.
 18. The method of claim17, wherein the adjusting is performed so that aperture has at least oneconvex side after the adjusting, if the thickness profile of the coatingdeposited on the first substrate is thicker at an end of the substratethan at a center of the substrate.
 19. The method of claim 17, whereinthe adjusting is performed so that aperture has at least one concaveside after the adjusting, if the thickness profile of the coatingdeposited on the first substrate is thinner at an end of the substratethan at a center of the substrate.
 20. The method of claim 17, whereinthe first and second dispensing steps and the adjusting step are allperformed under a partial vacuum.